Position Description

Τεχνική υποστήριξη ρεο-οπτικών πειραμάτων σε ρευστές διεπιφάνειες για ενεργειακές εφαρμογές.

Πειραματικη φυσική χαλαρών διεπιφανειών, οργανολογία σχετική με πειράματα ρεολογίας και οπτικών παρατηρήσεων σε ρευστές διεπιφάνειες και μεταβαλλόμενες θερμοκρασίες.

Για το πλήρες κείμενο της πρόσκλησης ακολουθήστε τον σύνδεσμο 'Related Documents'

Required Qualifications

• Μεταπτυχιακό σε πειραματική φυσική
• Εμπειρία με οργανολογία (ηλεκτρονικά, μηχανουργείο)
• Εμπειρία με ρεομετρία και σκέδαση φωτός σε ρευστές διεπιφάνειες
• Γνώση Αγγλικών
• Ισχυρές ικανότητες επικοινωνίας

Application Procedure

ΑΠΑΡΑΙΤΗΤΑ ΔΙΚΑΙΟΛΟΓΗΤΙΚΑ

Στο φάκελο υποβολής της πρότασης θα πρέπει να εμπεριέχονται τα ακόλουθα:

• Αίτηση (form Greek στην αριστερή στήλη) με αναφορά στο πρόγραμμα και στον κωδικό της θέσης
• Αναλυτικό Βιογραφικό Σημείωμα
• Ευκρινή φωτοαντίγραφα τίτλων σπουδών

Οι ενδιαφερόμενοι καλούνται να υποβάλουν τις αιτήσεις τους και όλα τα απαραίτητα δικαιολογητικά, ηλεκτρονικά στη διεύθυνση hr@iesl.forth.gr με κοινοποίηση (cc): στον Καθηγ. Δημήτριο Βλασσόπουλο (dvlasso@iesl.forth.gr).

Οι αιτήσεις θα πρέπει να αποσταλούν με την ένδειξη: «Αίτηση στο πλαίσιο του προγράμματος ΑΕΝΑΟ, της πρόσκλησης εκδήλωσης ενδιαφέροντος με Α.Π. … και κωδικό θέσης … » (όπως αυτός αναφέρεται στον Πίνακα του Παραρτήματος)

Appointment Duration

Position Description

Ανάπτυξη Βιοαισθητήρων σε Δισδιάστατα υλικά

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Related Project

Required Qualifications

• Πτυχίο Φυσικών Επιστημών ή Επιστήμης υλικών  
• Εμπειρία στην ανάπτυξη αισθητήρων  
• Εμπειρία στην ανάπτυξη αισθητήρων  
• Δημοσιεύσεις σε αισθητήρες  
• Άριστη γνώση της Αγγλικής γλώσσας  

Application Procedure

Στο φάκελο υποβολής της πρότασης θα πρέπει να εμπεριέχονται τα ακόλουθα:

• Αίτηση (form Greek στην αριστερή στήλη)  με αναφορά στον κωδικό της θέσης
• Αναλυτικό Βιογραφικό Σημείωμα
• Ευκρινή φωτοαντίγραφα τίτλων σπουδών

​ΥΠΟΒΟΛΗ ΠΡΟΤΑΣΕΩΝ

Οι ενδιαφερόμενοι καλούνται να υποβάλουν τις αιτήσεις τους και όλα τα απαραίτητα δικαιολογητικά, ηλεκτρονικά στη διεύθυνση hr@iesl.forth.gr με κοινοποίηση (cc): στον Δρ Εμμ. Στρατάκη (stratak@iesl.forth.gr).

Οι αιτήσεις θα πρέπει να αποσταλούν με την ένδειξη: «Αίτηση στο πλαίσιο του προγράμματος EPIGRAPH και της πρόσκλησης εκδήλωσης ενδιαφέροντος με Α.Π. … και κωδικό θέσης … » (όπως αυτός αναφέρεται στον Πίνακα του Παραρτήματος). 

Appointment Duration

Position Description

CAD manufacturing using lasers

For the full announcement, follow the link "Related Documents"

Related Project

Required Qualifications

• BSc degree in Engineering 
• Experience in CAD design and programs for manufacturing 
• Experience in programming languages, such as C, C++ and g-code 
• Experience in quality control 

Application Procedure

In order to be considered, the application must include:

• Application Form (Form Greek or Form English to the left)
• Detailed curriculum vitae (CV) of the candidate
• Scanned Copies of academic titles

Appointment Duration

Funding

Position Description

Optical Memristors are disruptive photonic elements which have attracted significant attention during the last few years, while offering unique switching and memory-like characteristics, for driving the future optical networks and sensing systems. The FORTH-SYNERGY project Optical Memristors, based on Photo-fluidity, Chalcogenide Whispering Gallery Mode Cavities (OMEGA) proposes the elaboration of an optical memristive component, fusing together the exotic photo-sensitivity properties of chalcogenide glasses (ChGs) and the extreme power accumulation and modal state density of whispering gallery modes (WGMs) resonation inside spheroid microcavities.

A highly competitive, post-doctoral research fellow is sought for the project OMEGA, for 12 months initial contract, with an additional up to 12 months, extension foreseen upon performance. The successful candidate must have a PhD degree in Physics or Electrical/Electronic Engineering, with a strong experimental/theoretical background in Optical Fiber Devices and/or Whispering Gallery Mode systems, being proven by publications record, previous experience and/or thesis subject and reference letters. The applicants must provide at least two names (preferably three) of academics who can provide reference letters. Previous background on Glass science/photosensitivity will be considered as a strong asset. Applications without satisfying the above criteria will not being considered.

For the full announcement, follow the link "Related Documents"

Required Qualifications

• PhD degree in Physics or Engineering
• Experience in optical fiber devices
• Experience in whispering gallery mode systems/physics 
• Materials/glass science/photosensitivity
• Working knowledge of English 

Application Procedure

Applications received before July 3^rd 2020 will receive immediate attention; however, applications will be reviewed thereafter until the position is filled.

Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications to the address (hr@iesl.forth.gr), with cc to the Scientific Coordinator Dr Stavros Pissadakis (pissas@iesl.forth.gr).

In order to be considered, the application must include:

• Application Form (Form Greek or Form English to the left)
• Detailed CV and list of publications
• Names of three academic referees
• Scanned copies of academic titles

Applications will be reviewed till the position is filled

Appointment Duration

Abstract

SnS crystals (Tin Sulfide), item:1

Tin Selenide (SnSe), item:1

Germanium Sulphide (GeS), item:1

Tungsten Disulfide (WS₂), item:1

Tungsten Diselenide (WSe₂), item:1

h-BN (Large size), item:1

Technical Characteristics

SnS crystals (Tin Sulfide), item:1 

Characteristics of vdW SnS crystals

Crystal size: 10mm or larger

Materials properties: Indirect gap semiconductor

Crystal structure: Hexagonal

Unit cell parameters: a = b = 0.368, c= 0.582 nm, α = β = 90⁰, γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional chemical vapor transport] Halide contamination is common

Purity: 99.9999% confirmed

Tin Selenide (SnSe), item:1 

SnSe single crystals characteristics

Crystal size: 1cm in size

Materials properties: Thermoelectric semiconductor (anisotropic semiconductor)

Crystal structure: Pnma [62]

Unit cell parameters: a = 0.421nm, b = 0.452 nm, c= 1.181 nm, α = β = γ = 90⁰

Growth method: Bridgman growth technique

Purity: 99.9999% confirmed

Germanium Sulphide (GeS), item:1 

Crystal size: Larger than 1cm

Materials properties: 1.65 eV semiconductor, anisotropic 2D material

Crystal structure: Orthorhombic

Unit cell parameters: a = 1.453, b = 0.365nm, c= 0.435 nm, α = β = γ =90⁰

Growth method: Flux zone (guaranteed no halide contamination)

                               [On request: chemical vapor transport (CVT) contains Br₂, Cl₂, TeCl_4, and other halides]

Purity: 99.9999% confirmed

For the cases of Tin Sulfide (SnS), Tin Selenide (SnSe) and Germanium Sulphide (GeS), high quality bulk crystals are required for series of experiments. There are reports with different experimental results for these crystals indicating that products differ with respect to the company that develops them. We have preliminary results using crystals from “2D semiconductors” and for consistency we would like to purchase from the same company.

Tungsten Disulfide (WS₂), item:1 

Typical characteristics of WS2 crystals from 2Dsemiconductors

Crystal size: ~1cm in size

Dopants: Undoped (intrinsic semiconductor)

Materials properties: 2.02 eV emission (300K), direct gap semiconductor

Crystal structure: Hexagonal phase

Unit cell parameters: a = b = 0.317nm, c= 1.230 nm, α = β = 90⁰ , γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional CVT]: Contains Br₂, Cl₂, TeCl_4, and other halidesPurity: 99.9999% confirmed

Purity: 99.9999% confirmed

Tungsten Diselenide (WSe₂), item:1 

Characteristics of WSe2 crystals from 2Dsemiconductors USA

Crystal size: ~1cm in size

Dopants: Undoped (intrinsic semiconductor)

Materials properties: 1.62 eV emission (300K), direct gap semiconductor

Crystal structure: Hexagonal phase

Unit cell parameters: a = b = 0.331nm, c= 1.298 nm, α = β = 90⁰ , γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional CVT]: Contains Br₂, Cl₂, TeCl_4, and other halides

Purity: 99.9999% confirmed

h-BN (Large size), item:1 

The properties of large size h-BN crystals

Sample size: Contains 3-4 crystals. Each measure < 5mm in size

Materials properties: 2D dielectric / insulator

Production method: Epitaxial solidification technique

Characterization method: SIMS, XRD, EDS, Raman (see product images)

For the cases of WS₂, WSe₂ and h-BN crystals, adding to consistency which is important to our experiments as we stated before, we would like to acquire crystals grown with flux zone method. We want to study the communication between flake of different crystals and it is reported that this phenomenon is more likely to happen for crystals grown with the referred method. “2D Semiconductors” offer high quality flux zone crystals that we think will be the optimal choice for our experiments.  

Procedure

SnS crystals (Tin Sulfide), item:1 

Characteristics of vdW SnS crystals

Crystal size: 10mm or larger

Materials properties: Indirect gap semiconductor

Crystal structure: Hexagonal

Unit cell parameters: a = b = 0.368, c= 0.582 nm, α = β = 90⁰, γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional chemical vapor transport] Halide contamination is common

Purity: 99.9999% confirmed

Tin Selenide (SnSe), item:1 

SnSe single crystals characteristics

Crystal size: 1cm in size

Materials properties: Thermoelectric semiconductor (anisotropic semiconductor)

Crystal structure: Pnma [62]

Unit cell parameters: a = 0.421nm, b = 0.452 nm, c= 1.181 nm, α = β = γ = 90⁰

Growth method: Bridgman growth technique

Purity: 99.9999% confirmed

Germanium Sulphide (GeS), item:1 

Crystal size: Larger than 1cm

Materials properties: 1.65 eV semiconductor, anisotropic 2D material

Crystal structure: Orthorhombic

Unit cell parameters: a = 1.453, b = 0.365nm, c= 0.435 nm, α = β = γ =90⁰

Growth method: Flux zone (guaranteed no halide contamination)

                               [On request: chemical vapor transport (CVT) contains Br₂, Cl₂, TeCl_4, and other halides]

Purity: 99.9999% confirmed

For the cases of Tin Sulfide (SnS), Tin Selenide (SnSe) and Germanium Sulphide (GeS), high quality bulk crystals are required for series of experiments. There are reports with different experimental results for these crystals indicating that products differ with respect to the company that develops them. We have preliminary results using crystals from “2D semiconductors” and for consistency we would like to purchase from the same company.

Tungsten Disulfide (WS₂), item:1 

Typical characteristics of WS2 crystals from 2Dsemiconductors

Crystal size: ~1cm in size

Dopants: Undoped (intrinsic semiconductor)

Materials properties: 2.02 eV emission (300K), direct gap semiconductor

Crystal structure: Hexagonal phase

Unit cell parameters: a = b = 0.317nm, c= 1.230 nm, α = β = 90⁰ , γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional CVT]: Contains Br₂, Cl₂, TeCl_4, and other halidesPurity: 99.9999% confirmed

Purity: 99.9999% confirmed

Tungsten Diselenide (WSe₂), item:1 

Characteristics of WSe2 crystals from 2Dsemiconductors USA

Crystal size: ~1cm in size

Dopants: Undoped (intrinsic semiconductor)

Materials properties: 1.62 eV emission (300K), direct gap semiconductor

Crystal structure: Hexagonal phase

Unit cell parameters: a = b = 0.331nm, c= 1.298 nm, α = β = 90⁰ , γ = 120⁰

Growth method: [Default] Flux zone (no halide contamination) defect free

                               [Optional CVT]: Contains Br₂, Cl₂, TeCl_4, and other halides

Purity: 99.9999% confirmed

h-BN (Large size), item:1 

The properties of large size h-BN crystals

Sample size: Contains 3-4 crystals. Each measure < 5mm in size

Materials properties: 2D dielectric / insulator

Production method: Epitaxial solidification technique

Characterization method: SIMS, XRD, EDS, Raman (see product images)

For the cases of WS₂, WSe₂ and h-BN crystals, adding to consistency which is important to our experiments as we stated before, we would like to acquire crystals grown with flux zone method. We want to study the communication between flake of different crystals and it is reported that this phenomenon is more likely to happen for crystals grown with the referred method. “2D Semiconductors” offer high quality flux zone crystals that we think will be the optimal choice for our experiments.  

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