Abstract
SnS crystals (Tin Sulfide), item:1
Tin Selenide (SnSe), item:1
Germanium Sulphide (GeS), item:1
Tungsten Disulfide (WS2), item:1
Tungsten Diselenide (WSe2), item:1
h-BN (Large size), item:1
Technical Characteristics
SnS crystals (Tin Sulfide), item:1
Characteristics of vdW SnS crystals
Crystal size: 10mm or larger
Materials properties: Indirect gap semiconductor
Crystal structure: Hexagonal
Unit cell parameters: a = b = 0.368, c= 0.582 nm, α = β = 900, γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional chemical vapor transport] Halide contamination is common
Purity: 99.9999% confirmed
Tin Selenide (SnSe), item:1
SnSe single crystals characteristics
Crystal size: 1cm in size
Materials properties: Thermoelectric semiconductor (anisotropic semiconductor)
Crystal structure: Pnma [62]
Unit cell parameters: a = 0.421nm, b = 0.452 nm, c= 1.181 nm, α = β = γ = 900
Growth method: Bridgman growth technique
Purity: 99.9999% confirmed
Germanium Sulphide (GeS), item:1
Crystal size: Larger than 1cm
Materials properties: 1.65 eV semiconductor, anisotropic 2D material
Crystal structure: Orthorhombic
Unit cell parameters: a = 1.453, b = 0.365nm, c= 0.435 nm, α = β = γ =900
Growth method: Flux zone (guaranteed no halide contamination)
[On request: chemical vapor transport (CVT) contains Br2, Cl2, TeCl4, and other halides]
Purity: 99.9999% confirmed
For the cases of Tin Sulfide (SnS), Tin Selenide (SnSe) and Germanium Sulphide (GeS), high quality bulk crystals are required for series of experiments. There are reports with different experimental results for these crystals indicating that products differ with respect to the company that develops them. We have preliminary results using crystals from “2D semiconductors” and for consistency we would like to purchase from the same company.
Tungsten Disulfide (WS2), item:1
Typical characteristics of WS2 crystals from 2Dsemiconductors
Crystal size: ~1cm in size
Dopants: Undoped (intrinsic semiconductor)
Materials properties: 2.02 eV emission (300K), direct gap semiconductor
Crystal structure: Hexagonal phase
Unit cell parameters: a = b = 0.317nm, c= 1.230 nm, α = β = 900 , γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halidesPurity: 99.9999% confirmed
Purity: 99.9999% confirmed
Tungsten Diselenide (WSe2), item:1
Characteristics of WSe2 crystals from 2Dsemiconductors USA
Crystal size: ~1cm in size
Dopants: Undoped (intrinsic semiconductor)
Materials properties: 1.62 eV emission (300K), direct gap semiconductor
Crystal structure: Hexagonal phase
Unit cell parameters: a = b = 0.331nm, c= 1.298 nm, α = β = 900 , γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity: 99.9999% confirmed
h-BN (Large size), item:1
The properties of large size h-BN crystals
Sample size: Contains 3-4 crystals. Each measure < 5mm in size
Materials properties: 2D dielectric / insulator
Production method: Epitaxial solidification technique
Characterization method: SIMS, XRD, EDS, Raman (see product images)
For the cases of WS2, WSe2 and h-BN crystals, adding to consistency which is important to our experiments as we stated before, we would like to acquire crystals grown with flux zone method. We want to study the communication between flake of different crystals and it is reported that this phenomenon is more likely to happen for crystals grown with the referred method. “2D Semiconductors” offer high quality flux zone crystals that we think will be the optimal choice for our experiments.
Procedure
SnS crystals (Tin Sulfide), item:1
Characteristics of vdW SnS crystals
Crystal size: 10mm or larger
Materials properties: Indirect gap semiconductor
Crystal structure: Hexagonal
Unit cell parameters: a = b = 0.368, c= 0.582 nm, α = β = 900, γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional chemical vapor transport] Halide contamination is common
Purity: 99.9999% confirmed
Tin Selenide (SnSe), item:1
SnSe single crystals characteristics
Crystal size: 1cm in size
Materials properties: Thermoelectric semiconductor (anisotropic semiconductor)
Crystal structure: Pnma [62]
Unit cell parameters: a = 0.421nm, b = 0.452 nm, c= 1.181 nm, α = β = γ = 900
Growth method: Bridgman growth technique
Purity: 99.9999% confirmed
Germanium Sulphide (GeS), item:1
Crystal size: Larger than 1cm
Materials properties: 1.65 eV semiconductor, anisotropic 2D material
Crystal structure: Orthorhombic
Unit cell parameters: a = 1.453, b = 0.365nm, c= 0.435 nm, α = β = γ =900
Growth method: Flux zone (guaranteed no halide contamination)
[On request: chemical vapor transport (CVT) contains Br2, Cl2, TeCl4, and other halides]
Purity: 99.9999% confirmed
For the cases of Tin Sulfide (SnS), Tin Selenide (SnSe) and Germanium Sulphide (GeS), high quality bulk crystals are required for series of experiments. There are reports with different experimental results for these crystals indicating that products differ with respect to the company that develops them. We have preliminary results using crystals from “2D semiconductors” and for consistency we would like to purchase from the same company.
Tungsten Disulfide (WS2), item:1
Typical characteristics of WS2 crystals from 2Dsemiconductors
Crystal size: ~1cm in size
Dopants: Undoped (intrinsic semiconductor)
Materials properties: 2.02 eV emission (300K), direct gap semiconductor
Crystal structure: Hexagonal phase
Unit cell parameters: a = b = 0.317nm, c= 1.230 nm, α = β = 900 , γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halidesPurity: 99.9999% confirmed
Purity: 99.9999% confirmed
Tungsten Diselenide (WSe2), item:1
Characteristics of WSe2 crystals from 2Dsemiconductors USA
Crystal size: ~1cm in size
Dopants: Undoped (intrinsic semiconductor)
Materials properties: 1.62 eV emission (300K), direct gap semiconductor
Crystal structure: Hexagonal phase
Unit cell parameters: a = b = 0.331nm, c= 1.298 nm, α = β = 900 , γ = 1200
Growth method: [Default] Flux zone (no halide contamination) defect free
[Optional CVT]: Contains Br2, Cl2, TeCl4, and other halides
Purity: 99.9999% confirmed
h-BN (Large size), item:1
The properties of large size h-BN crystals
Sample size: Contains 3-4 crystals. Each measure < 5mm in size
Materials properties: 2D dielectric / insulator
Production method: Epitaxial solidification technique
Characterization method: SIMS, XRD, EDS, Raman (see product images)
For the cases of WS2, WSe2 and h-BN crystals, adding to consistency which is important to our experiments as we stated before, we would like to acquire crystals grown with flux zone method. We want to study the communication between flake of different crystals and it is reported that this phenomenon is more likely to happen for crystals grown with the referred method. “2D Semiconductors” offer high quality flux zone crystals that we think will be the optimal choice for our experiments.
