Office Phone: (30) 2810 391835
Lab Phone: (30)2810 391322
Email: nkorakas(AT)iesl.forth.gr
Full CV: Download
Mr. Korakas Nikos

Nikos Korakas was born in Athens, Greece, in 1988. He studied Physics in the University of Crete, Greece, and he received his degree in 2012. Recently he received his master degree “Microsystem and Nanodevices” from National Technical University of Athens. He joined PMDL in May 2016 as a PhD student working on experimental and theoretical investigation of disruptive light localization in MOFs for the development of novel photonic devices.

Lab Phone: (+30) 2810 391322
Email: vgeo(AT)iesl.forth.gr
Full CV: Download
Dr. Violakis Georgios

Georgios Violakis received his B.Eng. degree in Metallurgy from National Technical University of Athens in 2005, receiving an award from the Technical Chamber of Greece for his diploma work. In 2008 he received his MSc degree in Micro- and Opto-electronics from the University of Crete and in 2013 he received his PhD degree in Photonics from École Polytechnique Fédéral de Lausanne (EPFL), Switzerland. His PhD thesis has been awarded the Professor René Wasserman Award (Switzerland). From 2013-2014 he has worked at EPFL as a post doctoral researcher, investigating novel lasing materials in optical fibers, and fabricating and embedding optical fiber sensors for aviation structural monitoring. From 2014-2017 he has worked as scientific collaborator at Empa, Thun (Switzerland), working in the field of large scale laser microfabrication and in the field of acoustic sensing using optical fiber probes. In July 2017 he joined the Photonic Materials and Devices Laboratory at Institute of Electronic Structure and Lasers in FORTH, Greece. He has authored or co-authored more than 40 peer-reviewed international journals and conference publications and is co-inventor of 3 international patents in the field of acoustic sensing. His current research interests are focused in novel non-linear optical materials for use in optical sensors and devices.

Education

  • 2013, Ph.D. in Photonics, EPFL (Ecole Polytechnique Federal de Lausanne), Switzerland
  • 2008, M.Sc. in Micro- and Opto-electronics, University of Crete, Greece
  • 2005, B.Eng. in Metallurgy, National Technical University of Athens, Greece

Interests

  • Optical fiber sensors
  • Non-linear optical materials
  • Non-linear optical devices

Awards/Prizes/Distinctions

  • 2013, Professor René Wasserman Award (Switzerland)
IQUBITS
Integrated Qubits towards Future High-Temperature Silicon Quantum Computing Hardware Technologies
Start Date: 01/01/2019,     End Date: 31/12/2022

The objectives of the interdisciplinary project IQubits are to (i) develop and demonstrate experimentally high-temperature (high-T) Si and SiGe electron/hole-spin qubits and qubit integrated circuits (ICs) in commercial 22nm Fully-Depleted Siliconon-Insulator (FDSOI) CMOS foundry technology as the enabling fundamental building blocks of quantum computing technologies, (ii) verify the scalability of these qubits to 10nm dimensions through fabrication experiments and (iii) prove through atomistic simulations that, at 2nm dimensions, they are suitable for 300K operation. The proposed 22nm FDSOI qubit ICs consist of coupled quantum-dot electron and hole spin qubits, placed in the atomic-scale channel of multi-gate nand p-MOSFETs, and of 60-240GHz spin control/readout circuits integrated on the same die in state-of-the-art FDSOI CMOS foundry technology. To assess the impact of future CMOS scaling, more aggressively scaled Si-channel SOI and nitride-channel qubit structures will also be designed and fabricated in two experimental processes with 10nm gate half pitch. The latter will be developed in this project. The plan is for the III-nitrides (III-N) qubits to be ultimately grown on a SOI wafer, to be compatible with CMOS. Because of their larger bandgap, III-N hold a better prospect than Si and SiGe for qubits with larger coupling energy and mode energy splitting, and 300K operation. As a radical breakthrough, the fabricated qubits will feature coupling energies on the order of 0.25-1 meV corresponding to control frequencies in the 60-240GHz range, suitable for operation at 3–12 degrees Kelvin, two orders of magnitude higher than today's qubits. The tuned mm-wave circuits allow for 10-20ps spin control pulses which help to filter out wideband thermal noise and largely enhance the ratio between the gating and the decoherence times. Thermal noise filtering and fast control of the spin may lead to even higher temperature operation for a given energy-level splitting.

Principal Investigator

Dr. Konstantinidis George
Research Director

Scientific Staff

Prof. Iliopoulos Eleftherios
University Faculty Member

Technical Staff

Mr. Stavrinidis George
Technical Scientist
Mr. Stavrinidis Antonis
Technical Scientist
Ms. Kontomitrou Vasiliki (Valia)
Technical Scientist
Mr. Kostopoulos Thanasis
Technical Scientist
Ms. Tsagaraki Katerina
Technical Scientist

Funding

European Horizon 2020 framework
CHIRON
Spin Wave Computing for Ultimately-Scaled Hybrid Low-Power Electronics
Start Date: 01/04/2018,     End Date: 31/03/2021

 CHIRON targets a proof of principle of the essential elements for spin wave computing by an interdisciplinary approach joining partners with expertise in material science, physics, nano-manufacturing, electrical engineering, device simulation, and circuit design. CHIRON will fabricate basic logic gates, such as inverters and majority gates, demonstrate their operation, and assess their performance. As transducers between the CMOS and spin wave domains in hybrid circuits, CHIRON will develop magnetoelectric and multiferroic nanoresonators, based on nanoscale bulk acoustic resonators, which bear promise for high energy efficiency and large output signal. The targeted lateral scale (100 nm) and resonance frequency (>10 GHz) bring such resonators to the frontier of nano-electromechanical systems (NEMS). This technological proof of principle is complemented by the design of digital hybrid spin wave–CMOS circuits that show the advantages of spin wave computing and can be integrated into a CMOS environment. Based on calibrated compact device models, the performance of these circuits in terms of power, area, and throughput will be benchmarked against CMOS to demonstrate their viability.

Principal Investigator

Dr. Konstantinidis George
Research Director

Technical Staff

Mr. Stavrinidis George
Technical Scientist
Mr. Stavrinidis Antonis
Technical Scientist
Mr. Kostopoulos Thanasis
Technical Scientist
Ms. Tsagaraki Katerina
Technical Scientist
Ms. Kontomitrou Vasiliki (Valia)
Technical Scientist

Funding

European Horizon 2020 framework
EINSTEIN
Experimental and theoretical studies of physical properties of low dimensional quantum nanoelectronic systems
Start Date: 01/02/2018,     End Date: 31/01/2020

The long term vision of EINSTEIN has two levels. On a first level is the creation of a world-leading international research consortium formed of Greek and Russian researchers capable of carrying out a cutting-edge research program aimed at the in-depth study of quantum phenomena in mesoscopic and nanostructured systems. It is in the long-term character of the project the continuation of the research program beyond the initial duration of the project, imply that on the long run the present focus directions will serve as nuclei for new developments. After the implementation of EINSTEIN project, this consortium will be able to join the EU Flagship on Quantum Technologies and participate in other high quality projects as well.
On a second level is the establishment of a technology platform providing functional quantum devices supported by theoretical models. Potentially, such a platform will provide the seed for further commercial exploitation of the quantum nanoelectronic devices.

Principal Investigator

Dr. Konstantinidis George
Research Director

Technical Staff

Mr. Stavrinidis George
Technical Scientist
Mr. Stavrinidis Antonis
Technical Scientist
Mr. Kostopoulos Thanasis
Technical Scientist
Ms. Kontomitrou Vasiliki (Valia)
Technical Scientist
Ms. Tsagaraki Katerina
Technical Scientist

Funding

European Horizon 2020 framework
Office Phone: (+30) 2810 39 4130
Lab Phone: (+30) 2810 39 4136
Email: emmxypakis@gmail.com
Dr. Xypakis Emmanouil

GDPR secrecy invoked by this person.
 

Office Phone: (+30) 2810 39 4128
Lab Phone: (+30) 2810 39 4136
Email: emmavro@physics.uoc.gr
Full CV: Download
Mr. Mavrotsoupakis Emmanouil

Education

  • 2017, M.Sc. in Photonics and Nanoelectronics, Physics Dpt, University of Crete, Greece
  • 2015, B.Sc. in Physics, Physics Dpt, University of Crete, Greece
Office Phone: (+30) 2810 39 4130
Lab Phone: (+30) 2810 39 4136
Email: balas@materials.uoc.gr
Full CV: Download
Mr. Balas Giannis (John)

Education

  • 2017 B.Sc in Material Science, Material Science Dpt, University of Crete, Greece
Office Phone: (+30) 2810 39 4128
Lab Phone: (+30) 2810 39 4136
Email: thyris@materials.uoc.gr
Full CV: Download
Mr. Thyris Ioannis

Education

  • 2017, M.Sc in "Photonics and Nanoelectronics", Physics Dpt, University of Crete, Greece
  • 2015, B.Sc. in Physics, Physics Dpt, University of Crete, Greece

Interests

  • Optical characterization of semiconductor nanostructures (Quantum Dots & Nanowires)
  • Laser systems (He:Cd, Femtosecond Ti:Sapphire, Diode pumped lasers)
  • Optical alignment using various optical elements
  • Time correlated single photon counting setup (Lifetime & auto-correlation measurements)

Awards/Prizes/Distinctions

  • 2018 Awarded the \Stavros Niarchos Foundation - FORTH Fellowship"

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