IESL-FORTH

Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies

Language English

Read more about Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies

A high frequency GaN Lamb-wave sensor device

Language English

Read more about A high frequency GaN Lamb-wave sensor device

AlN on silicon based surface acoustic wave resonators operating at 5 GHz

Language English

Read more about AlN on silicon based surface acoustic wave resonators operating at 5 GHz

Millimeter-wave identification: A new short-range radio system for low-power high data-rate applications

Language English

Read more about Millimeter-wave identification: A new short-range radio system for low-power high data-rate applications

Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications

Language English

Read more about Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications

Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Language English

Read more about Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Stavros Niarchos Foundation (SNF)

Submitted by admin_iesl on Sat, 02/16/2019 - 19:14

Read more about Stavros Niarchos Foundation (SNF)

ESPA 2007-2013 (ΕΣΠΑ)

Submitted by admin_iesl on Sat, 02/16/2019 - 19:10

Read more about ESPA 2007-2013 (ΕΣΠΑ)

NSRF 2014 - 2020 (ΕΣΠΑ)

Submitted by admin_iesl on Sat, 02/16/2019 - 19:06

Read more about NSRF 2014 - 2020 (ΕΣΠΑ)

NSRF 2007-2013 (ΕΣΠΑ)

Submitted by admin_iesl on Sat, 02/16/2019 - 18:57

Read more about NSRF 2007-2013 (ΕΣΠΑ)

Pages