A new study by researchers at IESL-FORTH and the University of Crete, in collaboration with colleagues from the National Institute for Materials Science (NIMS), Japan, demonstrates the formation of dipolar interlayer excitons in heterobilayers composed of transition metal dichalcogenide alloys. By combining alloy engineering with van der Waals heterostructures, the team observed long-lived interlayer excitons exhibiting excitation-power-dependent energy shifts, revealing strong dipolar interactions between excitons. These findings establish alloyed two-dimensional semiconductors as a promising platform for tailoring excitonic properties and exploring next-generation excitonic and quantum optoelectronic devices.

Reference: Katsipoulaki, E., Chatzarakis, N. G., Rigoutsou, E., Katrisioti, D., Taniguchi, T., Watanabe, K., ... & Paradisanos, I. (2026). Dipolar interlayer excitons in transition metal dichalcogenide alloy heterobilayers. Journal of Physics: Materials. Doi: 10.1088/2515-7639/ae9192