Micro-photoluminescence and time decay measurements in semiconductor nanostructures.
he candidate will apply micro-photoluminescence, time-resolved photoluminescence and photon-correlation spectroscopy techniques on various types of semiconductor nanostructures such as quantum dots and nanowires.
GaN polariton structures and their use as sources of entangled photons.
The candidate will design, fabricate and characterize GaN polariton structures in view of detecting entangled photon pairs produced by parametric scattering of polaritons. The main techniques that will be used are photo-electrochemical etching, micro-photoluminescence, micro-reflectivity and angle-resolved photoluminescence.
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- aster of Science in Physics, Materials Science or Electrical Engineering
- Experience in optical, electrical and structural characterization of semiconductors
- Experience in the optical characterization of single semiconductor nanostructures with microscopy techniques
- Master of Science in Physics, Materials Science or Electrical Engineering
- Experience in optical, electrical and structural characterization of gallium nitride
- Experience in the photo-electrochemical etching of GaN membranes
In order to be considered, the application must include:
- Application Form (Form Greek or Form English to the left)
- Detailed curriculum vitae (CV) of the candidate
- Scanned Copies of academic titles
- Certificate for enrollment in PhD program