Position 1
Micro-photoluminescence and time decay measurements in semiconductor nanostructures.
he candidate will apply micro-photoluminescence, time-resolved photoluminescence and photon-correlation spectroscopy techniques on various types of semiconductor nanostructures such as quantum dots and nanowires.
Position 2
GaN polariton structures and their use as sources of entangled photons.
The candidate will design, fabricate and characterize GaN polariton structures in view of detecting entangled photon pairs produced by parametric scattering of polaritons. The main techniques that will be used are photo-electrochemical etching, micro-photoluminescence, micro-reflectivity and angle-resolved photoluminescence.
For the full announcement, follow the link "Related Documents"
Position 1
Position 2
Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications to the address (hr@iesl.forth.gr [7]), with cc to Dr G. Deligeorgis (deligeo@iesl.forth.gr [8]).
In order to be considered, the application must include:
Links
[1] https://www.iesl.forth.gr/people/deligeorgis-george
[2] https://www.iesl.forth.gr/sites/default/files/formgr20231024.doc
[3] https://www.iesl.forth.gr/sites/default/files/formen20231024.docx
[4] https://www.iesl.forth.gr/sites/default/files/positions/%CE%A93%CE%999469%CE%97%CE%9A%CE%A5-551.pdf
[5] https://www.iesl.forth.gr/sites/default/files/positions/%CE%A8%CE%A655469%CE%97%CE%9A%CE%A5-%CE%930%CE%9B.pdf
[6] https://www.iesl.forth.gr/project/smartwave
[7] mailto:hr@iesl.forth.gr
[8] mailto:deligeo@iesl.forth.gr