Position Description

An early stage PhD candidate position to focus on optimization of field effect transistor structures for use in high frequency circuit. The ideal candidate should already be exposed to some related microelectronics laboratory work. Particularly ALD is considered critical

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Related Project

Required Qualifications

• Bachelor and Master's degree in Physics, Materials Science and/or equivalent 
• Acceptance to PhD program of a higher education institution
• Knowledge of solid state physics and basic chemistry 
• Experience in fabrication of microelectronics components 
• Experience in electrical characterization of microelectronic components 

Desirable Qualifications

Good knowledge of English (written and oral) 

Application Procedure

Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications to the address (hr@iesl.forth.gr), with cc to Dr G. Deligeorgis (deligeo@iesl.forth.gr).

In order to be considered, the application must include:

• Application Form (Form Greek or Form English to the left)
• Detailed curriculum vitae (CV) of the candidate
• Scanned Copies of academic titles
• Certificate for enrollment in PhD program

Appointment Duration

Funding