Publications
Nanofabrication of normally-off GaN vertical nanowire MESFETs
Nanotechnology, 30, 28, 2019, doi.org/10.1088/1361-6528/ab13d0
Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure
Solid-State Electronics, 158, pp 1-10, 2019, doi.org/10.1016/j.sse.2019.04.005
Correlation of Threading Dislocations with the Electron Concentration and Mobility in InN Heteroepitaxial Layers Grown by MBE
ECS Journal of Solid State Science and Technology, 9, 1, 2019, dx.doi.org/10.1149/2.0212001JSS
A high-frequency piezoelectric rheometer with validation of the loss angle measuring loop: application to polymer melts and colloidal glasses
Rheol Acta, 58, 619, 2019, https://doi.org/10.1007/s00397-019-01163-x
A comparative study of nanostructured Silicon-Nitride electrical properties for potential application in RF-MEMS capacitive switches
Microelectronics Reliability, 100-101, 113360, 2019, doi.org/10.1016/j.microrel.2019.06.052
Twist Angle mapping in layered WS2 by Polarization-Resolved Second Harmonic Generation
Scientific Reports, 9, 14285, 2019, https://doi.org/10.1038/s41598-019-50534-0
Spatially selective reversible charge carrier density tuning in WS2 monolayers via photochlorination
2D Materials, 6, 015003, 2019, https://doi.org/10.1088/2053-1583/aae45c
An electrical characterization methodology for identifying the switching mechanism in TiO2 memristive stacks
Sci Rep, 9, 8168, 2019, doi.org/10.1038/s41598-019-44607-3
Long-term stability of transparent n/p ZnO homojunctions grown by rf-sputtering at room-temperature
JMat, Journal of Materiomics , 5, 428-435, 2019, doi.org/10.1016/j.jmat.2019.02.006