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Ioannis Paradeisanos obtained his B.Sc. in 2012 from the University of Crete in Greece. In September 2014, he completed his Masters’ studies in micro-optoelectronics at the Physics department of the University of Crete and in March 2018 he obtained his Ph.D. degree from the same department. During his Ph.D. dissertation he studied the physics of different excitonic species in atomically thin semiconductors. After that, he moved as a postdoctoral research associate to the University of Cambridge, where he worked on the optical and vibrational properties of layered materials. From October 2019 to September 2022 he was a member of the Quantum Optoelectronics group in Toulouse to study the optical properties of transition metal dichalcogenide monolayers and their heterostructures. In October 2022 he moved to Crete and IESL/FORTH with a financial support by the Hellenic Foundation for Research and Innovation (H.F.R.I.) under the “3rd Call for H.F.R.I. Research Projects to support Post-Doctoral Researchers.