The candidate will design, fabricate and characterize GaN polariton structures in view of detecting entangled photon pairs produced by parametric scattering of polaritons. The main techniques that will be used are photo-electrochemical etching, micro-photoluminescence, micro-reflectivity and angle-resolved photoluminescence.
For the full announcement, follow the link "Related Documents"
Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications to the address (hr@iesl.forth.gr), with cc to Prof. Nikos Pelekanos (pelekano@materials.uoc.gr [6]).
In order to be considered, the application must include:
Links
[1] https://www.iesl.forth.gr/people/pelekanos-nikos
[2] https://www.iesl.forth.gr/sites/default/files/formgr20231024.doc
[3] https://www.iesl.forth.gr/sites/default/files/formen20231024.docx
[4] https://www.iesl.forth.gr/sites/default/files/positions/90%CE%A6%CE%A1469%CE%97%CE%9A%CE%A5-0%CE%95%CE%91%20%282%29.pdf
[5] https://www.iesl.forth.gr/sites/default/files/positions/%CE%A8%CE%A8%CE%A7%CE%97469%CE%97%CE%9A%CE%A5-%CE%9949.pdf
[6] mailto:pelekano@materials.uoc.gr
[7] https://www.iesl.forth.gr/sites/default/files/formen.docx