Published on
IESL-FORTH
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https://www.iesl.forth.gr
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Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy
Language
Undefined
Eftychis, S., Kruse, J. E., Tsagaraki, K., Koukoula, T., Kehagias, Th, Komninou, Ph, Georgakilas, A.
514
pp 89-97
2019
doi.org/10.1016/j.jcrysgro.2019.03.004
Journal
Journal of Crystal Growth