IESL-FORTH
Published on IESL-FORTH (https://www.iesl.forth.gr)


Effects of ultrathin AlN prelayers on the spontaneous growth of GaN nanowires by plasma assisted molecular beam epitaxy

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Eftychis, S., Kruse, J. E., Tsagaraki, K., Koukoula, T., Kehagias, Th, Komninou, Ph, Georgakilas, A.
514
pp 89-97
2019
doi.org/10.1016/j.jcrysgro.2019.03.004
Journal
Journal of Crystal Growth