Employ sample preparation techniques such as scribing, lapping and polishing for the fabrication of micro & nanoelectronic devices and circuits based on Gallium Nitride
For the full announcement, follow the link "Related Documents"
Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications to the address (hr@iesl.forth.gr [7]), with cc to Dr G. Konstantinidis (aek@physics.uoc.gr [8]).
In order to be considered, the application must include:
Links
[1] https://www.iesl.forth.gr/people/konstantinidis-george
[2] https://www.iesl.forth.gr/sites/default/files/formgr20231024.doc
[3] https://www.iesl.forth.gr/sites/default/files/formen20231024.docx
[4] https://www.iesl.forth.gr/sites/default/files/positions/9%CE%A8%CE%93%CE%9C469%CE%97%CE%9A%CE%A5-%CE%A3%CE%A6%CE%A5.pdf
[5] https://www.iesl.forth.gr/sites/default/files/positions/%CE%A8%CE%92%CE%93%CE%93469%CE%97%CE%9A%CE%A5-%CE%96%CE%A67.pdf
[6] https://www.iesl.forth.gr/project/irel40
[7] mailto:hr@iesl.forth.gr
[8] mailto:aek@physics.uoc.gr