IESL-FORTH
Published on IESL-FORTH (https://www.iesl.forth.gr)


Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

English
K. Zekentes, K. Vassilevski, A.Stavrinidis, G. Konstantinidis, M. Kayambaki, K. Vamvoukakis, E. Vassakis, H. Peyre, N. Makris, M. Bucher, P. Schmid, D. Stefanakis, D. Tassis
858
913 - 916
2016
doi.org/10.4028/www.scientific.net/MSF.858.913
Journal
Materials Science Forum