IESL-FORTH
Published on IESL-FORTH (https://www.iesl.forth.gr)


Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy

English
J. E. Kruse, L. Lymperakis, S. Eftychis, A. Adikimenakis, G. Doundoulakis, K. Tsagaraki, M. Androulidaki, A. Olziersky, P. Dimitrakis, V. Ioannou-Sougleridis, P. Normand, T. Koukoula, Th. Kehagias, Ph. Komninou, G. Konstantinidis and A. Georgakilas
119
224305
2016
doi.org/10.1063/1.4953594
Journal
Journal of Applied Physics