Published on IESL-FORTH (https://www.iesl.forth.gr)

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

English
A. Bairamis, Ch. Zervos, A. Adikimenakis, A. Kostopoulos, M. Kayambaki, K. Tsagaraki, G. Konstantinidis, and A. Georgakilas
105
113508
2014
https://doi.org/10.1063/1.4896026
Journal
Appl. Phys. Letters