IESL-FORTH
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Molecular Beam Epitaxy III-Arsenides

Submitted by waliakon on Tue, 02/06/2018 - 10:46

Molecular Beam epitaxy system by VG 80H with automated control.

  1. Capable of handling up to 3" substrates
  2. RHEED 15KeV system
  3. Mass spectrometer 1 - 300 amu
  4. K-cells for Galium (2), Aluminum (2), Arsenide, Indium, Silicon and Berilium
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