Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

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C. Bazioti, E. Papadomanolaki, Th. Kehagias, T. Walther, J. Smalc-Koziorowska, E. Pavlidou, Ph. Komninou, Th. Karakostas, E. Iliopoulos, GP. Dimitrakopulos

118

155301

2015

doi.org/10.1063/1.4933276

Journal

Journal of Applied Physics