Published on IESL-FORTH (https://www.iesl.forth.gr)

Experimental and modeling insight for fin-shaped transistors based on AlN/GaN/AlN double barrier heterostructure

Undefined
Doundoulakis, G., Adikimenakis, A., Stavrinidis, A., Tsagaraki, K., Androulidaki, M., Deligeorgis, G., Konstantinidis, G., Georgakilas, A.
158
pp 1-10
2019
doi.org/10.1016/j.sse.2019.04.005
Journal
Solid-State Electronics