Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics

Language English

M Blaho, D Gregušová, Š Haščík, A Seifertová, M Ťapajna, J Šoltýs, A Šatka, L Nagy, A Chvála, J Marek, J-F Carlin, N Grandjean, G Konstantinidis and J Kuzmík

065011

2016

doi.org/10.1088/0268-1242/31/6/065011

Journal

Semicond. Sci. Technol.