Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size

Published on IESL-FORTH (https://www.iesl.forth.gr)

Language English

P. A. Loukakos, C. Kalpouzos, I. E. Perakis, Z. Hatzopoulos, M. Logaki, C. Fotakis

2883

2001

https://doi.org/10.1063/1.1413219

Journal

Appl. Phys. Lett.