(a) p-type oxides:
(i) Development of undoped and Ba-doped p-type SrCu2O2 (SCO) thin films by PLD and realization of p-SCO/n-ZnO:Al, p-SCO/n-Si and p-SCO/p-Si heterostructures.
(ii) Development, by sputtering, of p-type NiO and Ni(Al,Cu)O for opto-electronic and sensing applications.
(b) n-type oxides:
(i) Modification of rf-sputtered Indium-Tin-Oxide (ITO) properties by introducing nitrogen in the structure and converting it into oxynitride (ITON). Realization of ITON thin films as: (a) transparent ohmic contact on GaAs-based solar cells -including MQW solar cells (b) transparent ohmic contact on p-GaN and (c) mask for deep reactive ion etching of Si (MEMs)
(ii) Development of ZnO:Si, ZnO:Al,Si, TiO2:Nb