Semiconductor vacuum growth and material characterization specialist to be involved in SiC transistor development .The main target of the Anti-SiC is to develop new 4H-SiC (silicon carbide) transistors which will be the basic component of a new photovoltaic inverter. FORTH has to perform the development (fabrication, modeling and analysis) of high power SiC JFETs.
· PhD with specialization in semiconductors/microelectronics
· Experience in vacuum semiconductor growth
· Experience in semiconductor characterization
· Experience in semiconductor devices and circuits
· At least 4-year research experience after the PhD
Project Duration: 5 months, with possibility of extension
Place: Heraklion, Crete, Greece
Start Date: 01/07/2014
Interested candidates who meet the aforementioned requirements are kindly asked to submit their applications, no later than 11/06/2014 by email to (firstname.lastname@example.org), with cc to the Scientific Coordinator, Dr. Konstantinos Zekentes (email@example.com).
In order to be considered, the application must include:
· Application Form (please download file from the position announcement webpage)
· Brief CV
· Scanned copies of academic titles
Any application received after the deadline will not be considered for the selection
For information and questions regarding the application and selection procedure, candidates are asked to contact Ms. Aggeliki Tsigkri (firstname.lastname@example.org), tel. +30 2810-391353
For information and questions about the advertised position and the research activity of the group or the institute, candidates are asked to contact the Scientific Coordinator, Dr. Konstantinos Zekentes (email@example.com), tel. +30 2810-394108
Applications that are received on time are going to be reviewed by the scientific committee. The committee will select the candidacies that best match the position and project requirements, based on the score that they will get according to the criteria table as shown on the Appendix in the end of the present announcement. If necessary, certain candidates will be invited to a personal interview with the committee on a specific date and time that will be announced.
The successful candidates will be personally notified and will be asked to present the required documents in original form within seven (7) working days after the results announcement on the web and the time period for appeals. In the case that the presented documents don’t match those submitted, the candidates will be dismissed from the procedure.
THE DIRECTOR OF IESL