Dr. Emmanouil Dimakis

Institute of Ion Beam Physics and Materials Research Helmholtz-Zentrum Dresden-Rossendorf

Growth and applications of III-V nanowires on Si substrates

Abstract

 Growth and applications of III-V nanowires on Si substrates
Emmanouil Dimakis
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf
Bautzner Landstraße 400, 01328 Dresden, Germany
III-V semiconductor nanowires have been a subject of intense research over the last 10 years and a plethora of exciting nanoscale phenomena has been unveiled. The peculiar strain relaxation mechanisms in nanowire heterostructures offer the possibility to integrate epitaxially materials with large mismatch of lattice parameters and thermal expansion coefficients. Thus, one can tailor the (opto)electronic properties of nanowire heterostructures using an extended palette of materials compared to traditional thin-film heterostructures. Furthermore, the epitaxial growth of III-V nanowires on lattice mismatched Si substrates is of great interest, because the two complementary technologies can thus be integrated on single multifunctional chips combining the superior electronic and optoelectronic properties of the former with the mature CMOS technology of the latter.
This seminar will be focusing on III-As nanowires grown on Si(111) substrates by molecular beam epitaxy. Starting from the basic description of the vapor-liquid-solid (self-induced) growth of GaAs (InAs) nanowires,1,2 the problem of structural polytypism and its effect on the nanowire optoelectronic and electrical properties will be discussed3,4 and, finally, the droplet-confined alternate pulsed epitaxy will be proposed as a unique growth mode that offers compatibility with the Si-CMOS processing standards.5 Finally, the growth and the structural properties of coaxial multishell (In,Al,Ga)As/GaAs nanowires will be discussed, and their application in light emitting diodes or modulation doped heterostructures will be demonstrated.6
1 E. Dimakis, J. Lähnemann, U. Jahn, S. Breuer, M. Hilse, L. Geelhaar, and H. Riechert, Cryst. Growth Des. 2011, 11, 4001–4008
2 A. Biermanns, E. Dimakis, A. Davydok, T. Sasaki, L. Geelhaar, M. Takahasi, and U. Pietsch, Nano Lett. 2014, 14, 6878−6883
3 P. Schroth, M. Köhl, and J.-W. Hornung, E. Dimakis, C. Somaschini, L. Geelhaar, A. Biermanns, S. Bauer, S. Lazarev, U. Pietsch, T. Baumbach, Phys. Rev. Lett. 2015, 114, 055504
4 G. Bussone, H. Schäfer-Eberwein, E. Dimakis, A. Biermanns, D. Carbone, A. Tahraoui, L. Geelhaar, P. Haring Bolívar, T. U. Schülli, and U. Pietsch, Nano Lett. 2015, 15, 981−989
5 L. Balaghi, T. Tauchnitz, R. Hübner, L. Bischoff, H. Schneider, M. Helm, and E. Dimakis, Nano Lett. 2016, 16, 4032−4039
6 E. Dimakis, U. Jahn, M. Ramsteiner, A. Tahraoui, J. Grandal, X. Kong, O. Marquardt, A. Trampert, H. Riechert, and L. Geelhaar, Nano Lett. 2014, 14, 2604−2609



Date: 5/8/2016
Time:12:00 (coffee & cookies will be served at 11:45)
Place:FORTH Seminar Room 1