Science of Multifunctional Oxide Thin Film Growth and
Interface Processes and Application to Multifunctional Micro and Nano-Devices
O. Auciello
Materials
Science Division, Argonne National Laboratory,
Argonne, IL
60439
Invited
talk to be presented at the 1st
International Symposium on transparent Conducting Oxides,
The submitted manuscript has been created by the University
of Chicago as Operator of Argonne National Laboratory (“Argonne”) under
Contract No. W-31-109-ENG-38 with the U.S. Department of Energy. The U.S.
Government retains for itself, and others acting on its behalf, a paid-up,
nonexclusive, irrevocable worldwide license in said article to reproduce,
prepare derivative works, distribute copies to the public, and perform publicly
and display publicly, by or on behalf of the Government.
This work was supported by the US Department of Energy, BES-Materials Sciences, under Contract W-13-109-ENG-38.
Science of Multifunctional Oxide Thin Film Growth and
Interface Processes and Application to Multifunctional Micro and Nano-Devices
O. Auciello
Materials
Science Division, Argonne National Laboratory,
Argonne, IL
60439
We have developed unique combinations of in situ and ex situ analytical techniques capable of providing information
about thin film growth and interface processes at the atomic scale. The in situ techniques include
time-of-flight ion scattering (TOF-ISARS) and mass spectroscopy of recoil
ions (MSRI), functional in relatively
high background pressure environments such as growth of oxide films in oxygen
atmospheres, angle resolved XPS, Auger analysis and extreme ultraviolet
photoelectron spectroscopy (EUPS), soft X-ray reflectometry, and spectroscopic
ellipsometry. These techniques are not only powerful for understanding
fundamental thin film science, but are also useful for establishing
composition-microstructure-property relationships critical for the development
of multicomponent oxide film integration for fabrication of film-based micro
and nanodevices. Studies focused on understanding ferroelectric and high-k
dielectric film growth and interface processes will be discussed, as well as
the use of this knowledge for developing integration of ferroelectric
capacitors with silicon microcircuits for non-volatile ferroelectric random
access memories (FERAMs), development of high-K dielectric capacitors for
high-frequency devices, and development of new high-K dielectric layers for the
next generation of nanoscale CMOS gates. This presentation will include a
review of studies of a new TiAl layer developed in our laboratory that can be
used as a material with a double diffusion barrier / bottom electrode
functionality for integration of ferroelectric capacitors with CMOS devices for
fabrication of FeRAMs, high-K dielectric layers with Cu electrodes for high
frequency devices, and as a new high-K dielectric for the next generation of
nanoscale CMOS devices. Studies were performed to understand TiAl film growth
and oxidation processes using sputter-deposition in conjunction with
complementary in situ characterization
techniques mentioned above and ex situ transmission
electron microscopy and electrical characterization.
* This work
was supported by the US Department of Energy, BES-Materials Sciences, under Contract
W-13-109-ENG-38.